Positive bias temperature instability degradation of buried InGaAs channel n-MOSFETs with InGaP barrier layer and Al2O3 dielectric

PBTI stress induced interface trap density in buried InGaAs channel n-MOSFETs with InGaP barrier layer and AI ₂ O ₃ dielectric is investigated. DC I _d -V _g measurements show both degradations of positive ΔV _g and sub-threshold swing (S) in the sub-threshold region, also show degradation of positive ΔV _g in the on-current region. The I _d -V _g degradation is mainly contributed by generation of acceptor-like near interface traps under stress.