Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory

Po-Hsun Chen,Kuan-Chang Chang,Ting-Chang Chang,Tsung-Ming Tsai,Chih-Hung Pan,Yu-Ting Su,Cheng-Hsien Wu,Wan-Ching Su,Chih-Cheng Yang,Min-Chen Chen,Chun-Hao Tu,Kai-Huang Chen,Ikai Lo,Jin-Cheng Zheng,Simon M. Sze

IEEE Transactions on Electron Devices（2016）

引用 6|浏览32

暂无评分

摘要

In this paper, indium-tin-oxide (ITO) was used to act as both insulator and top electrode in resistive random access memory (RRAM) on identical bottom substrates. This is achieved by cosputtering an ITO target with nitride (N2) or oxygen (O2) gas as the insulator; then capping by an ITO electrode, such that both the rectifier and RRAM characteristics can be achieved before and after a forming proc...

查看译文

关键词

Indium tin oxide,Insulators,Resistance,Switches,Electrodes,Random access memory,Temperature measurement

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要