Demonstration of a sub-0.03 um² high density 6-T SRAM with scaled bulk FinFETs for mobile SOC applications beyond 10nm node

Shien-Yang Wu,C.Y. Lin,M.C. Chiang,J.J. Liaw,J.Y. Cheng,Chih-Sheng Chang,Vincent S. Chang, K.H. Pan,Ching-Wei Tsai, C.H. Yao,T. Miyashita, Y.K. Wu, K. C. Ting, C.H. Hsieh, R.F. Tsui,R. Chen,Chang-Ta Yang, Hui-Cheng Chang, C.Y. Lee,K.S. Chen,Y. Ku, Syun-Ming Jang

2016 IEEE Symposium on VLSI Technology（2016）

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摘要

For the first time, we demonstrate the smallest, fully functional 32Mb 6-T high density SRAM reported in literature with scaled bulk FinFETs for CMOS technology beyond 10nm node. Scaled FinFET devices exhibit excellent electrostatic with DIBL of <;45mV/V and sub-threshold swing of <;65mV/decade and competitive drive current. Static noise margin of ~90mV for the high density SRAM operated down to 0.45V is achieved.

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关键词

6T SRAM,FinFET devices,mobile SOC,CMOS technology,electrostatic,drain induced barrier lowering,DIBL,drive current,voltage 90 mV

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Demonstration of a sub-0.03 um2 high density 6-T SRAM with scaled bulk FinFETs for mobile SOC applications beyond 10nm node

Demonstration of a sub-0.03 um² high density 6-T SRAM with scaled bulk FinFETs for mobile SOC applications beyond 10nm node