A Retention-Aware Multilevel Cell Phase Change Memory Program Evaluation Metric

Win-San Khwa,Meng-Fan Chang,Jau-Yi Wu,Ming-Hsiu Lee,Tzu-Hsiang Su,Tien-Yen Wang,Hsiang-Pang Li,M. BrightSky,SangBum Kim,Hsiang-Lan Lung,Chung H. Lam

IEEE Electron Device Letters（2016）

引用 5|浏览60

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摘要

Multilevel cell (MLC) phase change memory (PCM) offers many potential advantages in scalability, bit-alterability, non-volatility, and high program speed. While many program approaches had been proposed, they were usually evaluated in energy, delay, or energy-delay product (EDP). These metrics, however, often overlook the data integrity maintenance (DIM) overhead caused by the resistance drift (R-...

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关键词

Phase change materials,Resistance,Shape,Pulse measurements,Phase change memory,Programming

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