Contact resistance reduction on layered MoS2 by Ar plasma pre-treatment

Yen-Teng Ho,Yung-Ching Chu,Chao An Jong,Hung-Yi Chen,Meng-Wei Lin,Ming Zhang,Po-Yen Chien,Yung-Yi Tu,Jason C. S. Woo,Edward Yi Chang

2016 IEEE Silicon Nanoelectronics Workshop (SNW)（2016）

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摘要

The effect of resistance (Rc) reduction of Ti/Au contact on MoS ₂ by ICP Ar plasma pretreatment is presented. The lowest Rc of 1.72 ohm-cm was achieved with the ICP treatment condition of 50W (ICP) /2W (chuck) for 10 sec. Compared with the contact without treatment (19.6 ohm-cm), the Rc improves over 10 times, demonstrating the advantage of Ar plasma pre-treatment on MoS ₂ contact.

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关键词

layered molybdenum sulfide,contact resistance reduction,metal contact,ICP argon plasma pretreatment,inductively coupled plasma,power 50 W,power 2 W,time 10 s,Ti-MoS2,Au-MoS2

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