Random soft error suppression by stoichiometric engineering: CMOS compatible and reliable 1Mb HfO2-ReRAM with 2 extra masks for embedded IoT systems

ChiaHua Ho, T. Y. Shen, P. Y. Hsu,S. C. Chang, S. Y. Wen,M. H Lin, P. K. Wang, S. C. Liao, C. S. Chou, K. M. Peng, C. M. Wu, W. H. Chang, Y. H. Chen, F. Chen, L. W. Lin, T. H. Tsai, S. F. Lim, C. J. Yang, M. H. Shieh,H. H. Liao,C. H. Lin, P. L. Pai, T. Y. Chan, Y. C. Chiao

2016 IEEE Symposium on VLSI Technology（2016）

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摘要

12" manufacturable 90nm CMOS fully compatible 1Mb HfO ₂ -ReRAM by 2 extra masks between Metals with BEoL thermal stress immunity is for the first time achieved in this work. Cycle random soft error, for the first time systematically observed in this work, due to improper phase-transition of TiO _δ on filament are successfully suppressed by stoichiometric engineering on HfO ₂ / reservoir interface to achieve reliable 20K / 100K endurance and 85°C 10 years retention. This technology can thus offer potential applications of embedded IoT systems due to low energy consumption and cost effective benefit.

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关键词

resistance random access memory,energy consumption,hafnium oxide-reservoir interface,phase-transition,cycle random soft error,BEoL thermal stress immunity,CMOS fully compatible hafnium oxide-ReRAM,embedded IoT systems,masks,reliable hafnium oxide-ReRAM,stoichiometric engineering,random soft error suppression,size 90 nm,HfO2

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