Stacked Nanowires FETs: Mechanical robustness evaluation for sub-7nm nodes

Loic Gaben,Arthur Arnaud,Marios Barlas,M. P. Samson,C. Arvet, Christian Vizioz,Jean-Michel Hartmann,Sylvain Barraud,S. Monfray,F. Boeuf,T. Skotnicki,F. Balestra,Maud Vinet

2016 IEEE Silicon Nanoelectronics Workshop (SNW)（2016）

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摘要

Stacked Nanowires FETs are proposed to replace FinFET and FDSOI for sub-7nm nodes. While most studies demonstrate the performances gain offered by such structures, mechanical stability of the suspended silicon channels needs to be considered. This paper provides a fully mechanical analytical description of nanowire stacks to explain the occurrence of buckling phenomena of silicon channels.

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关键词

stacked nanowires FET,FinFET,FDSOI,performances gain,mechanical stability,suspended silicon channels,nanowire stacks,buckling phenomena,mechanical robustness evaluation,size 7 nm

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