A New High Holding Voltage Dual-Direction SCR With Optimized Segmented Topology
IEEE Electron Device Letters(2016)
摘要
While silicon controlled rectifiers (SCRs) are highly robust electrostatic discharge (ESD) protection devices, they typically are not suited for high-voltage ESD protection due to their inherently low holding voltage and thus vulnerability to latch-up threat. In this letter, a new high holding voltage dual-direction SCR (NHHVDDSCR) with a small area and optimized topology is developed in a 0.18-μm...
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关键词
Thyristors,Electrostatic discharges,Current density,Robustness,Topology,Voltage measurement
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