A New High Holding Voltage Dual-Direction SCR With Optimized Segmented Topology

IEEE Electron Device Letters(2016)

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摘要
While silicon controlled rectifiers (SCRs) are highly robust electrostatic discharge (ESD) protection devices, they typically are not suited for high-voltage ESD protection due to their inherently low holding voltage and thus vulnerability to latch-up threat. In this letter, a new high holding voltage dual-direction SCR (NHHVDDSCR) with a small area and optimized topology is developed in a 0.18-μm...
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关键词
Thyristors,Electrostatic discharges,Current density,Robustness,Topology,Voltage measurement
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