A Ka-Band Single-Chip SiGe BiCMOS Phased-Array Transmit/Receive Front-End

IEEE Transactions on Microwave Theory and Techniques(2016)

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摘要
This paper presents the detailed design and demonstration of a Ka-band single-chip transmit (TX)/receive (RX) front-end in 0.13-μm SiGe BiCMOS technology. The front-end includes single-pole double-throw (SPDT) switches, low-noise amplifier, loss compensation amplifiers (LCAs), phase shifter, and power amplifier. Distributed structures are utilized in gain amplifiers to ensure broadband performance...
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关键词
Gain,Phase shifters,Silicon germanium,Phased arrays,BiCMOS integrated circuits,Transmission line measurements,Transistors
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