Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry

SOLID STATE PHENOMENA(2016)

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摘要
Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real concern in integrated circuits manufacturing. We present here a high-frequency acoustic method which enables the local determination of the wetting state of a liquid on real DTI and TSV structures. Partial wetting states for non-hydrophobic surfaces or low surface tension liquids are detectable with this method. Filling time of TSV structures has also been measured.
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关键词
Deep Trench Isolation,Through Silicon Via,wetting kinetics,high aspect ratio,acoustic reflectometry
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