Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays

•The superlattice materials were grown with both GaAs-like and InSb-like interface to balance the strain.•The pixel was isolated by chlorine-based plasma etching together with citric acid-based chemical wet etching.•The first device with 50% cutoff wavelength of 4.1μm shows NETD∼18mK from 77K to 100K.•The NETD of the second device with 50% cutoff wavelength at 5.6μm is 10mK at 77K.