Effect Of Hydrogenation On The Characteristics Of Gaas Schottky Diodes
PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2(2002)
摘要
The n- GaAs epitaxial layers over n+ GaAs substrates were subjected to hydrogenation by plasma as well as by chemical technique (catalytic hydrogenation). The reduction in free carrier concentration after hydrogenation has been observed using ECV profiler. The studies towards change in ideality factor (eta) and reverse saturation current (I-o) of the diode have been determined by fabricating Au/Ni/GaAs Schottky diodes on hydrogenated and unhydrogenated n-GaAs layers.
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