Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure

In this letter, we propose a new method to improve resistive switching properties in ZrO2-based conductive-bridge resistive memory devices by introducing a thin AlN layer with high thermal conductivity between the ZrO2 layer and TiN bottom electrode. Compared with the Cu/TiW/ZrO2/TiN single-layer device, the Cu/TiW/ZrO2/AlN/TiN bilayer device exhibits lower operation voltages, higher endurance per...