Epitaxial Growth Of Gasb And Inas Fins On 300mm Si (001) By Aspect Ratio Trapping

We report on the monolithic integration of GaSb and InAs fins on on-axis 300mm Si (001) by metal-organic chemical vapor deposition. The thickness of the GaAs/Si (001) fins used as a template is optimized to allow the formation of {111} facets and the confinement of defects generated at the GaAs/GaSb and GaAs/InAs interfaces by means of the aspect ratio trapping technique. Antiphase domains are avoided via a careful design of the GaAs/Si interface. Threading dislocations in GaSb are controlled through the formation of an interfacial misfit dislocation array along the GaSb/GaAs [(1) over bar 11] and [1 (1) over bar1] interfaces. Defects on InAs are controlled through the promotion of a two-dimensional growth, which spontaneously occurs on GaAs {111} planes. The results represent a step forward towards the integration of III-V nano-scale photonic and electronic components on a Si complementary metal-oxide-semiconductor compatible platform using a precisely engineered GaAs on Si template. Published by AIP Publishing.