Design considerations for GaN/AlN based unipolar (opto-)electronic devices, and interface quality aspects

Andrew Grier,A. Valavanis, C. Edmunds,J. Shao,J. D. Cooper,Geoffrey C. Gardner, M. J. Mantra,Oana Malis,D. Indjin,Z. Ikonić,P. Harrison

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)（2016）

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摘要

We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.

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关键词

unipolar optoelectronic devices,realistic material quality parameters,interface roughness,resonant tunnelling diodes,interface quality aspects,GaN-AlN

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