Switching-Speed Limitations of Ferroelectric Negative-Capacitance FETs

Zhi Cheng Yuan,Shahriar Rizwan,Michael Wong,Kyle David Holland,Sam Anderson,Terence B. Hook,Diego Kienle, Serag Gadelrab,Prasad S. Gudem,Mani Vaidyanathan

IEEE Transactions on Electron Devices（2016）

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摘要

Recently, negative-capacitance FETs (NCFETs) have been proposed to reduce subthreshold slope and help continue supply-voltage scaling alongside channel-length scaling. We investigate the high-frequency switching behavior of NCFETs using the Landau-Khalatnikov equation to model ferroelectric materials. Multidomain interactions in the ferroelectric are considered, resulting in strong agreement with ...

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关键词

Capacitors,Lattices,Mathematical model,MOS devices,Crystals,Capacitance,Integrated circuit modeling

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