Characterisation of field plated high electron mobility transistor
international conference on microelectronics computing and communications, pp. 1-3, 2016.
The paper proposes the structure and analysis of SiNx passivated AlGaN/AlN/GaN High Electron Mobility Transistor (HEMT), which exhibits minimal OFF state leakage current and has very low characteristic threshold voltage. Analysis of SiNx passivated AlGaN/AlN/GaN HEMT, with gate to drain separation of 10 μm, was done using Silvaco ATLAS™ C...More
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