Colloidal Quantum Dot Photonic Crystal Lasers With M-Point Band-Edge Emission

Hojun Chang,Kyungtaek Min,Myungjae Lee,Minsu Kang,Yeonsang Park,Kyung Sang Cho,Young-Geun Roh,Sungwoo Hwang,Heonsu Jeon

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)（2016）

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摘要

Utilizing colloidal quantum dots (CQDs) as a gain material in a passive two-dimensional photonic crystal (PC) backbone structure, we have experimentally demonstrated room-temperature lasing operation at band-edge modes. A silicon nitride PC slab on silica substrate contains a square lattice array of air-holes, which is designed to have an in-plane, M-point low index band-edge mode. The air-hole array is then infiltrated by colloidal quantum dots using simple spin-coating method.

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关键词

colloidal quantum dot photonic crystal laser,M-point band-edge emission,CQD,gain material,passive two-dimensional photonic crystal backbone structure,room-temperature lasing operation,band-edge modes,silicon nitride PC slab,silica substrate,square air-hole lattice array,M-point low index band-edge mode,spin-coating method,temperature 293 K to 298 K,SiN,SiO2

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