Unbalanced Layout Method for the 4H-SiC JBS Diode Offering Improved Tradeoff between Leakage Current and ON-Resistance

Two critical issues in the electrical characteristics of the 4H-SiC junction barrier Schottky (JBS) diode are the OFF-state leakage current and the ON-resistance, which are in a tradeoff relationship. To overcome the limitations resulting from these electrical characteristics, an unbalanced layout method is proposed in this letter. It can be verified that the difference in the mobility at the side...