BEOL process integration for the 7 nm technology node

Genevieve Beique
Genevieve Beique
H.-C. Chen
H.-C. Chen
Shyng-Tsong Chen
Shyng-Tsong Chen
B. Hamieh
B. Hamieh
Joe Lee
Joe Lee
J. McMahon
J. McMahon
Yann Mignot
Yann Mignot
Koichi Motoyama
Koichi Motoyama
Son Van Nguyen
Son Van Nguyen
Raghuveer Patlolla
Raghuveer Patlolla

international interconnect technology conference, pp. 2-4, 2016.

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Abstract:

A 36 nm pitch BEOL has been evaluated for the 7 nm technology node. EUV lithography was employed as a single-exposure patterning solution. For the first time, it is shown that excellent reliability results can be obtained for Cu interconnects at these small dimensions, by using a TaN/Ru barrier system and a selective Co cap.

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