BEOL process integration for the 7 nm technology node
international interconnect technology conference, pp. 2-4, 2016.
A 36 nm pitch BEOL has been evaluated for the 7 nm technology node. EUV lithography was employed as a single-exposure patterning solution. For the first time, it is shown that excellent reliability results can be obtained for Cu interconnects at these small dimensions, by using a TaN/Ru barrier system and a selective Co cap.
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