Effects of Reactive Ti Creating Oxygen Vacancy Inside TiO 2 on Resistive Switching Characteristics in Resistive Random Access Memory DeviceS. J. Kim,Min Gyu Sung, W. G. Kim,J. Y. Kim,J. H. Yoo,J. N. Kim,Byung Gu Gyun, J. Y. Byun,Moon-Sig Joo,Jae-Sung Roh, Sung-Hyung ParkThe Japan Society of Applied Physics（2010）引用 0|浏览5暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
