Low power/self-compliance of resistive switching elements modified with a conduction Ta-oxide layer through low temperature plasma oxidization of Ta thin film
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)(2016)
摘要
A Ta ultra-thin metal layer was treated by O
2
plasma at low temperature to form TaOx, which severs as a resistive element or internal resistor. The low current operated Ta/TaOx/HfO
x
and Ta/TaOx/AlOx devices exhibit self-compliance, good LRS nonlinearity (>40), robust retention at 85 °C, and enough endurance (>1000). A plausible mechanism is proposed. The low temperature plasma oxidation of Ta layer is demonstrated an potential process for vertical RRAM with self-compliance and low current operation of 5 μA.
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关键词
resistive switching elements,conduction oxide layer,low temperature plasma oxidization,ultrathin metal layer,internal resistor,vertical RRAM,temperature 85 degC,current 5 muA,Ta
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