Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)(2016)

引用 6|浏览139
暂无评分
摘要
Various RRAM concepts are currently being investigated (Oxide based RAM, Conductive Bridge RAM), all showing pros and cons depending on the architecture and memory stack. As the specifications are strongly application-dependent, it is likely that the RRAM technology will be bound to a specific market segment. In this paper, we discuss the potential of RRAM for non-volatile memory applications, among them: storage class memory, embedded memory, programmable logic, mass storage and neuromorphic applications. By means of experimental studies and simulations, we analyze the role of the integrated materials on the memory performances and reliability and try to propose optimized stacks suitable for each targeted application.
更多
查看译文
关键词
nonvolatile memory,resistive RAM functionality,resistive RAM reliability,oxide based RAM,conductive bridge RAM,architecture stack,memory stack,RRAM technology,market segment,storage class memory,embedded memory,programmable logic,mass storage,neuromorphic applications
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要