High temperature ion implanter for SiC and Si devices

SiC wafers are often used for making high level power electronic devices, such as SiC-MOS devices or SiC-IGBTs. Ion implantation is an essential process for making these high level power electronic devices. High temperature implanter called IMPHEAT® is developed to implant ions such as Aluminum, Boron, Phosphine and others into SiC wafers while heating the SiC wafers to high temperature like 500 ^o C. Some of the characteristics of IMPHEAT® and the high temperature implanter EXCEED® has been introduced in this paper.