Adapting $\text{B}^{+}$ -Tree for Emerging Nonvolatile Memory-Based Main Memory

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems(2016)

引用 19|浏览48
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摘要
Among the emerging nonvolatile memory (NVM) technologies, some resistive memories, including phase change memory (PCM), spin-transfer torque magnetic random access memory (STT-RAM), and metal-oxide resistive RAM (ReRAM), have been considered as promising replacements of conventional dynamic RAM (DRAM) to build future main memory systems. Main memory databases can benefit from their nice features, ...
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关键词
Nonvolatile memory,Random access memory,Phase change materials,Databases,Algorithm design and analysis,Memory management,Computational modeling
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