ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

R. Aubry,J. C. Jacquet,M. Oualli,O. Patard,S. Piotrowicz,E. Chartier,N. Michel,L. Trinh Xuan,D. Lancereau,C. Potier,M. Magis,P. Gamarra,C. Lacam,M. Tordjman,O. Jardel,C. Dua,S. L. Delage

IEEE Electron Device Letters（2016）

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摘要

High-frequency Metal Insulator Semiconductor High-Electron-Mobility Transistors (MIS HEMTs) were fabricated on quaternary InAlGaN/AlN/GaN heterostructures, grown by MOCVD on a 3” SiC substrate. Specific studies were performed on SiN ICP-CVD passivation layers. Improved performances were obtained with these optimized devices at 30 GHz as evidenced by CW Load Pull characterization: an output power o...

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关键词

Passivation,HEMTs,Power generation,Current measurement,Logic gates,Gain

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