Investigation of Low-Frequency Noise Properties in High-Mobility ZnON Thin-Film Transistors

We investigate the low-frequency noise (LFN) properties of amorphous zinc oxynitride (a-ZnON) thin-film transistors (TFTs) exhibiting high field-effect mobilities ranging from 48.5 to 118.9 cm2/V · s, depending on the gas flow rates during the deposition process. The measured noise power spectral density of the drain current shows that the LFN in a-ZnON TFTs obeys the classical 1/f noise theory, i...