A 5.8 Ghz Class-F Gan Power Amplifier For Solar Power Satellite

2015 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATION PROBLEM-SOLVING (ICCP)（2015）

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摘要

This paper presents a 5.8 GHz class-F power amplifier (PA) using Cree's CGH40010 10-W GaN HEMT for solar power satellite application. The output harmonic control networks based on impedance-match approach is employed to obtain high output power and high efficiency. Finally, power added efficiency (PAE) is up to 64.1% with a gain of 10 dB and output power of 41dBm in simulation at 5.8 GHz.

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关键词

class-F power amplifier,solar power satellite,Cree CGH40010,HEMT,harmonic control network,impedance-match approach,power added efficiency,PAE,high electron mobility transistor,frequency 5.8 GHz,power 10 W,gain 10 dB,GaN

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