Anions (N, S) Mono-Doping And Co-Doping Influences On Electronic Structures And Optical Properties Of Innbo4

INTERNATIONAL JOURNAL OF MODERN PHYSICS B(2016)

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摘要
In this paper, the electronic structures and optical properties of N-doped, S-doped and N/S-codoped InNbO4 were systematically investigated by first-principles calculations based on density functional theory (DFT). As for N-doped InNbO4, the acceptor N2p states would introduce on the upper edge of the valence band (O-2p). While S-3p states would mix with O-2p states when O atom was replaced by S atom in InNbO4. As for N/S-codoped InNbO4, N-2p states mixed with S-3p states above the valence band, resulting in the energy bandgap further narrower in contrast to those of the individual N(S)-doped InNbO4. The optical absorption edge of N/S-codoped InNbO4 displayed an obvious redshift and was successfully extended to visible light region due to the synergistic effect of N/S co-doping. This research proposed that N/S co-doping was a promising method to improve the photocatalytic properties of InNbO4.
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关键词
Semiconductors, electronic structures, photocatalyst, first-principles
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