Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory

The dependence of the write-error rate (WER) on the applied write voltage, write pulse width, and device size was examined in individual devices of a spin-transfer torque (STT) magnetic random-access memory (MRAM) 4 kbit chip. We present 10 ns switching data at the 10-6 error level for 655 devices, ranging in diameter from 50 nm to 11 nm, to make a statistically significant demonstration that a sp...