Tid And Segr Radiation Characterisation Of European Cots Power Mosfets With Respect To Space Application Electronics

Michael Wind,Jayasimha V. Bagalkote,P. Beck,Marcin Latocha,Marc Poizat

2015 15TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS)（2015）

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摘要

We investigated TID radiation response and SEGR susceptibility of two COTS power MOSFETs by exposing them to Co-60 photons with 100 krad(Si) and various heavy ion fields of LET between 18.5 and 60 MeV.mg(-1).cm(2).

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关键词

TID radiation characterisation,SEGR radiation characterisation,COTS power MOSFET,space application electronics,SEGR susceptibility,total ionizing dose,single event gate rupture

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