An Investigation of the SET Response of Devices and Differential Pairs in a 32-nm SOI CMOS Technology

Zachary E. Fleetwood,Nelson E. Lourenco,Adrian Ildefonso,Troy D. England,Ickhyun Song,Robert L. Schmid,Adilson S. Cardoso,Seungwoo Jung,Nicolas J.-H. Roche,Ani Khachatrian,S. Buchner,Dale McMorrow,Jeffrey H. Warner,Pauline Paki,John D. Cressler

IEEE Transactions on Nuclear Science（2015）

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摘要

The single event effect (SEE) response of devices and differential pairs in a 32-nm SOI CMOS technology is explored using laser-induced carrier injection and TCAD simulations. Both nFETs and pFETs in this technology exhibit similar sensitive area to laser-induced SEE and are strongly dependent on the drain bias condition. TCAD simulations were conducted in order to confirm results and utilize a 3-...

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关键词

Transient analysis,Field effect transistors,CMOS technology,Semiconductor device modeling,Single event transients,CMOS technology,Silicon-on-insulator

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