Soft Error Rate Improvements in 14-nm Technology Featuring Second-Generation 3D Tri-Gate Transistors

We report on radiation-induced soft error rate (SER) improvements in the 14-nm second generation high- k + metal gate bulk tri-gate technology. Upset rates of memory cells, sequential elements, and combinational logic were investigated for terrestrial radiation environments, including thermal and high-energy neutrons, high-energy protons, and alpha-particles. SER improvements up to ~ 23× with resp...