Record Maximum Transconductance of 3.45 mS/ $\mu \text{m}$ for III-V FETs

This letter presents a self-aligned InGaAs quantum-well MOSFET with a transconductance, gm,max, of 3.45 mS/μm at Vds = 0.5 V. This is a record value among III-V FETs of any kind, including MOSFETs and HEMTs, and represents an improvement of over 10% with respect to the previous record on planar devices. This result was achieved by redesigning the access regions that link the intrinsic device to th...