Depletion-Based Optical Modulators In A Bulk 65 Nm Cmos Platform

F. Pavanello,A. Atabaki,M. T. Wade,L. Alloatti,J. Notaros,S. Moazeni,C. Baiocco, D. Coleman, D. Coolbaugh,V. Stojanovic,R. J. Ram,M. A. Popovic

2016 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)（2016）

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摘要

We present poly-silicon depletion-based optical modulators realized in a 65 nm CMOS platform for monolithic integration with electronics. Speeds up to 12.5 Gbit/s can be achieved with 5 dB insertion loss and 2.3 dB extinction ratio.

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关键词

CMOS platform,poly-silicon depletion-based optical modulators,electronics,insertion loss,extinction ratio,size 65 nm,bit rate 12.5 Gbit/s,loss 5 dB,Si

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