A Comparison of Single-Event Transients in Pristine and Irradiated ${{\rm Al}_{0.3}}{{\rm Ga}_{0.7}}{{\rm N}/{\rm GaN}}$ HEMTs using Two-Photon Absorption and Heavy Ions

Single-event transients (SETs) were investigated in Al0.3Ga0.7N/GaN high-electron-mobility transistors (HEMTs) using optical excitation via two-photon absorption and by heavy ions. The amplitudes and widths of the SETs were found to depend on a number of different factors, including bias conditions, strike location, and material quality.