Analysis of Resistance and Mobility in InGaAs Quantum-Well MOSFETs From Ballistic to Diffusive Regimes

Recent advances in the fabrication technology have yielded nanometer-scale InGaAs quantum-well (QW) MOSFETs with extremely low and reproducible external contact and access region resistances. This allows, for the first time, a detailed analysis of the role of ballistic transport in the operation of these devices. This paper presents a systematic analysis of external resistance, ballistic resistanc...