Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM
IEEE Transactions on Electron Devices(2016)
摘要
Resistive switching memory (RRAM) has been proposed as an artificial synapse in neuromorphic circuits due to its tunable resistance, low power operation, and scalability. For the development of high-density neuromorphic circuits, it is essential to validate the state-of-the-art bistable RRAM and to introduce small-area building blocks serving as artificial synapses. This paper introduces a new syn...
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关键词
Neuromorphics,Immune system,Neurons,Resistance,Switches,Logic gates
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