Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM

IEEE Transactions on Electron Devices(2016)

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摘要
Resistive switching memory (RRAM) has been proposed as an artificial synapse in neuromorphic circuits due to its tunable resistance, low power operation, and scalability. For the development of high-density neuromorphic circuits, it is essential to validate the state-of-the-art bistable RRAM and to introduce small-area building blocks serving as artificial synapses. This paper introduces a new syn...
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关键词
Neuromorphics,Immune system,Neurons,Resistance,Switches,Logic gates
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