Te Doping Effect of InGaP in Tunnel Junction on the Performance of InGaP/InGaAs/Ge Triple-Junction Solar Cells

Tellurium (Te) doping of InGaP with diethyl Te (DETe) was investigated to apply for tunnel junctions (TJs) in multijunction solar cells. When the DETe flow rate was 2 sccm, the electron concentration was found to increase with decreasing growth temperature. The obtained electron concentration reached up to ~1 × 1019 cm-3. The photovoltaic (PV) properties of InGaP/InGaAs/Ge triple-junction solar ce...