Impact of extension implantation conditions of fin field-effect transistors on gate-induced drain leakage

The influence of the extension doping conditions on gate-induced drain leakage (GIDL) has been investigated to optimize fin field-effect transistors (FinFETs) for ultralow-power (ULP) applications. An increased GIDL for a smaller fin thickness and a dependence on the implanted ion species, i.e., a larger GIDL for As than for P, are recognized. These results suggest that the residual defects due to extension doping increase the GIDL, and the suppression of the defects by the optimization of the doping process is the key to the optimization of FinFETs for ULP applications. (C) 2016 The Japan Society of Applied Physics