Considering Physical Mechanisms And Geometry Dependencies In 14nm Finfet Circuit Aging And Product Validations

Sangwoo Pae,Hyunchul Sagong,Changze Liu,Minjung Jin,Yong-Il Kim,Seungjin Choo,Ju-youn Kim, Hwa-Kyung Kim,Sungyoung Yoon,H. W. Nam,Hyewon Shim,Sung-wook Park,Joon-Yong Park,Sang-chul Shin,Ju-Seop Park

2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2015）

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摘要

We report the extensive 14nm FinFET reliability characterization work and provide physical mechanisms and geometry dependencies. BTI, HCI variability related to #of Fin used in design along with self-heat considerations are critical for product design and qualifications. We show that along with increased AFs and optimized product HTOL stress conditions, 5-10x more efficiency in time has been achieved. In addition, external mechanical strain on Fin reliability will be discussed.

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关键词

physical mechanisms,geometry dependencies,FinFET circuit aging,product validations,reliability,BTI,HCI variability,self-heat considerations,external mechanical strain,size 14 nm

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