Physical-Based Analytical Model Of Flexible A-Igzo Tfts Accounting For Both Charge Injection And Transport

Matteo Ghittorelli,Fabrizio Torricelli,van der J-L Steen,Carmine Garripoli,Ashutosh Tripathi,Gerwin H. Gelinck,Eugenio Cantatore,Zsolt Miklós Kovács-Vajna

2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2015）

引用 8|浏览12

暂无评分

摘要

Here we show a new physical-based analytical model of a-IGZO TFTs. TFTs scaling from L=200 mu m to L=15 mu m and fabricated on plastic foil are accurately reproduced with a unique set of parameters. The model is used to design a zero-VGS inverter. It is a valuable tool for circuit design and technology characterization.

查看译文

关键词

physical-based analytical model,flexible a-IGZO TFT,charge injection,charge transport,TFT scaling,plastic foil,zero-VGS inverter design,circuit design,technology characterization,amorphous indium-gallium-zinc-oxide thin-film transistors,InGaZnO

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要