Improvement of Characteristics of NbO2 Selector and Full Integration of 4F2 2X-Nm Tech 1S1R ReRAM

Soo Gil Kim,Tae Jung Ha,Seonghyun Kim,Jae Yeon Lee,Kyung Wan Kim,Jung Ho Shin,Yong Taek Park, Suk Pyo Song,Beom Yong Kim,Wan Gee Kim, Jong Chul Le, Hyun Sun Lee, Jong Ho Song, Eung Rim Hwang, Sang Hoon Cho, Ja Chun Ku, Jong Il Kim,Kyu Sung Kim,Jong Hee Yoo, Hyo Jin Kim, Hoe Gwon Jung,Kee Jeung Lee,Suock Chung, Jong Ho Kang,Jung Hoon Lee, Hyeong Soo Kim,Sung Joo Hong,Gary Gibson,Yoocharn Jeon

2015 IEEE International Electron Devices Meeting (IEDM)（2015）

Cited 18|Views12

Key words

1S1R ReRAM,cross-point ReRAM,off-current characteristic,forming characteristic,spacer material,niobium dioxide selector,selector resistor material,resistive random access memory,NbO2

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