A Gaas Planar Schottky Barrier Diode (Psbd) And Its Application In Terahertz Integrated Mixers

A GaAs Planar Schottky Barrier Diode (PSBD) with Schottky contact radium of 1pm has been fabricated using Electron Beam Lithography method. The measured ideality factor, reverse current, series resistance, junction capacitance and the cut-off frequency of the PSBD are 1.29, 150 fA, 3 52, 11 fF and 4.8 THz, respectively. A 340GHz 4x sub-harmonic mixer (SHM) chip was designed using the proposed GaAs PSBD. The 4x SHM was measured through on-wafer testing. With LO frequency of 85 GHz, the measured conversion loss of Si dB was obtained. The 4x SHM chip occupies 600pmx 970jtm including the testing pads.