Multi-Layer Stacking Scheme Of Sol-Gel Based Sio2 Towards Thicker (> 0.8 Mu M) Cladding Layers For Optical Waveguides

A multi-layer stacking scheme using a sol-gel SiO2 fabrication technique was developed towards stacking thick layers of >0.8 mu m for cladding and passivation layers of optical waveguides. The multi-layer stacking scheme, which improves the intrinsic stress problem especially in case of thick layer stacking, enables a >0.8 mu m sol-gel SiO2 thickness without cracking and peeling issues. As a result, thick layer of 3.5 mu m with high surface resistivity of >6.6 x 10(13)Omega/m was obtained. Furthermore, a-Si/SiO2 waveguide (cladding thickness: 1.9 mu m) was realized to confirm the fundamental potential as a cladding layer.