Extraction of p-n junction properties and series resistance in GaAs nanowire based solar cells using light concentration.

Series resistance in solar cells limit their maximum conversion efficiency and thus should be minimized. Generally, such losses originate from deficiencies at the contact or absorber level. Quantifying them is the first step for tackling its reduction. In this work, we provide a new way to assess the series resistance in nanowire-based solar cells, which significantly underperforms predicted theoretical efficiency. We illuminate the devices at different levels of light intensity (from 1 to 1000 suns), which gives us insight in the carrier transport and series losses mechanism. We demonstrate the method on a device obtained by self-assembled GaAs nanowire p-n junction arrays on silicon. This analysis method provides a platform to distinguish the intrinsic response of the nanowire p-n junction from the series resistance effects. More generally, we provide a means of optimizing the efficiency in next generation solar cells, where contacts still have to be developed.