Tuning The Electronic Structure Of Single-Walled Carbon Nanotube By High-Pressure H-2 Exposure

We report on an electronic structure change of single-walled carbon nanotube (SWNT) on hexagonal boron nitride due to electron doping via high-pressure H-2 exposure. The fractional coverage of hydrogenated carbon atom is estimated to be at least theta = 0.163 from the in situ I-ds-V-g measurements of the release process. Raman spectroscopy and x-ray photoelectron spectroscopy were carried out to support the in situ electrical measurements. In particular, we used the dissociative Langmuir-type model to yield the desorption coefficient k(des) by fitting it to the in situ electrical data. Finally, we applied this hydrogenation method to the SWNT network on the commercial Si/SiO2 substrate to open the possibility of the scalable n-type semiconducting SWNT FETs.