A fully integrated quartz MEMS VHF TCXO

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control(2017)

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摘要
We report on a 32-MHz quartz TCXO fully integrated with commercial CMOS electronics and vacuum packaged at wafer level using a low-temperature MEMS-after quartz process. The novel quartz resonator design provides for stress isolation from the CMOS substrate thereby yielding classical AT-cut f/T profiles and low hysteresis which can be compensated to <; ± 0.2 ppm over temperature using on-chip third-order compensation circuity. The TCXO operates at low power of 2.5 mW and can be thinned to ≤ 300 μm as part of the wafer-level eutectic encapsulation. Full integration with large SOA CMOS wafers is possible using carrier wafer techniques.
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关键词
Quartz MEMS,AT-cut TCXO oscillators,Stress isolation,CMOS integration,Temperature compensation,Wafer-level vacuum packaging
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