A Simplified Yield Model for SRAM Repair in Advanced Technology.

Xiaoyuan Qi,Raymond J. Rosner,John Hopkins,Jack M. Higman, Rick Mewhirter,Aaron Sinnott,Binod Kumar G. Nair,Ishtiaq Ahsan, Mark Lagus

IEEE Transactions on Very Large Scale Integration (VLSI) Systems（2018）

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摘要

A simplified yield model for static random access memory (SRAM) repair has been proposed. This simplified model provides minimum required redundancy to repair all bit cell failures even at early stage of technology development. First, a negative binomial model is used to illustrate the idea for minimum SRAM redundancy scheme. A more practical model is developed afterward to evaluate the minimum re...

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关键词

Random access memory,Redundancy,Maintenance engineering,Computational modeling,Integrated circuit modeling,Data models,Analytical models

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