Event-Based Circuits For Controlling Stochastic Learning With Memristive Devices In Neuromorphic Architectures

2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)(2018)

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摘要
Memristive devices have emerged as compact non-volatile memory elements which can be used as synapses in neuromorphic architectures. However, the intrinsic stochasticity in their switching behavior, non-linear characteristics, and variability limit their operation in real systems. In this paper we propose spike-based learning circuits designed to exploit the stochastic properties of memristors. This implements a probabilistic version of a local gradient descent rule, namely the delta rule, for online learuing in neuromorphic chips. The circuits proposed translate the delta error to the slope of a ramp voltage which modulates the probability of resistive switching in very low resolution (i.e. binary) memristive devices. We demonstrate the feasibility and computational power of such approach, using a spiking neural network simulator to carry out system level behavioral simulations of the neuromorphic architecture applied to a classification task of digits 0 to 4 in the MNIST data-set.
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关键词
event-based circuits,memristive devices,neuromorphic architecture,compact nonvolatile memory elements,intrinsic stochasticity,switching behavior,nonlinear characteristics,local gradient descent rule,delta rule,online learning,neuromorphic chips,system level behavioral simulations,stochastic learning control,neuromorphic architectures,spike-based learning circuits,stochastic properties,memristors,delta error,ramp voltage,resistive switching probability,low resolution memristive devices,spiking neural network simulator,size 4.0 inch
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